nte100 (pnp) & nte101 (npn) germanium complementary transistors oscillator, mixer for am radio, medium speed switch absolute maximum ratings: (t a = +25 c unless otherwise specified) collector?base voltage, v cbo 25v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector?emitter voltage (note 1), v ceo nte100 24v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . nte101 25v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter?base voltage, v ebo nte100 12v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . nte101 25v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector current, i c nte100 100ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . nte101 300ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter current (nte100 only), i e 100ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total device dissipation, p d 150mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above 25 c 2.5mw/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating collector junction temperature, t j +85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?65 to +100 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . note 1. punch?through voltage. electrical characteristics: (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit collector?base brteakdown voltage nte100 v (br)cbo i e = 0 i c = 20 a 25 ? ? v nte101 i c = 100 a 25 ? ? v emitter?base breakdown voltage nte100 v (br)ebo i c = 0 i e = 20 a 12 ? ? v nte101 i e = 100 a 25 ? ? v punch through voltage nte100 v pt v ebfl = 1v, note 2 24 ? ? v nte101 25 ? ? v collector cutoff current nte100 i cbo i e = 0 v cb = 12v ? 1 5 a v cb = 12v, t a = +80 c ? 40 90 a nte101 v cb = 25v ? 3 6 a note 2. v pt is determined by measuring the emitter?base floating potential v ebfl . the collector? base voltage, v cb , is increased until v ebfl = 1v; this value of v cb = (v pt + 1v). care must be taken not to exceed maximum collector?base voltage specified under maximum ratings.
electrical characteristics (cont?d): (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit emitter cutoff current nte100 i ebo i c = 0 v eb = 2.5v ? 1 2.5 a nte101 v eb = 25v ? 2 6 a static forward current transfer ratio nte100 h fe v ce = 0.15v, i c = 12ma 30 100 ? v ce = 0.20v, i c = 24ma 24 110 ? nte101 v ce = 1v, i c = 10ma 20 100 ? v ce = 0.35v, i c = 200ma 10 100 ? base ? emitter voltage nte100 v be i b = 0.4ma, i c = 12ma ? 0.26 0.35 v i b = 1ma, i c = 24ma ? 0.30 0.40 v nte101 i b = 0.5ma, i c = 10ma 0.15 0.22 0.40 v collector ? emitter saturation voltage nte100 v ce(sat) i b = 0.4ma, i c = 12ma ? 0.08 0.15 v i b = 1ma, i c = 24ma ? 0.08 0.20 v nte101 i b = 0.5ma, i c = 10ma ? 0.07 0.20 v small ? signal forward current transfer ratio nte100 h fe v ce = 6v i c = 1ma, f = 1khz ? 135 ? nte101 v ce = 5v ? 105 ? output capacitance nte100 c ob v cb = 6v i e = 0, f = 1mhz ? 9 20 pf nte101 v cb = 5v ? 14 20 pf switching characteristics delay time nte100 t d i c = 10ma, i b(1) = 1.3ma, ? 0.14 ? s nte101 i b(2) = 0.7ma, v be(off) = 0.8v, r l = 1k ? ? 0.07 ? s rise time t r r l = 1k ? ? 0.20 ? s storage time nte100 t s ? 0.38 ? s nte101 ? 0.70 ? s fall time nte100 t f ? 0.19 ? s nte101 ? 0.40 ? s stored base charge q sb i b(1) = 1ma, i c = 10ma ? 800 1400 pcb
45 .031 (.793) .019 (0.5) dia emitter base collector .352 (8.95) dia max .320 (98.13) dia max .250 (6.35) max 1.500 (38.1) min
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